Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Jinchai Li; Na Gao; Duanjun Cai; Wei Lin; Kai Huang; Shuping Li; Junyong Kang

doi:10.1038/s41377-021-00563-0

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Light Sci Appl. 2021 Jun 16:10:129. doi: 10.1038/s41377-021-00563-0. eCollection 2021.

Authors

Jinchai Li^#¹, Na Gao^#¹, Duanjun Cai¹, Wei Lin¹, Kai Huang¹, Shuping Li¹, Junyong Kang¹

Affiliation

¹ Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China.

^# Contributed equally.

Abstract

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

Keywords: Inorganic LEDs; Metamaterials.

Publication types

Review