Functional Group-induced p-Doping of MoS2 by Titanium(IV) Bis(ammonium lactato) Dihydroxide Physisorption

Yeru Liu; Guangzhao Wang; Fang Luo; Huimin Li; Mengjian Zhu; Xiaochi Liu; Shengyuan A Yang; Song Liu

doi:10.1002/asia.202100300

Functional Group-induced p-Doping of MoS₂ by Titanium(IV) Bis(ammonium lactato) Dihydroxide Physisorption

Chem Asian J. 2021 Jul 5;16(13):1756-1761. doi: 10.1002/asia.202100300. Epub 2021 May 28.

Authors

Yeru Liu¹, Guangzhao Wang^{2

3}, Fang Luo⁴, Huimin Li¹, Mengjian Zhu⁴, Xiaochi Liu⁵, Shengyuan A Yang³, Song Liu¹

Affiliations

¹ Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
² School of Electronic Information Engineering, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing, 408100, P. R. China.
³ Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore.
⁴ College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China.
⁵ School of Physics and Electronics, Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, Central South University, Changsha, 410083, P. R. China.

PMID: 33991065
DOI: 10.1002/asia.202100300

Abstract

P-type doping is of critical importance for the realization of certain high-performance electrical and optoelectronic devices based on molybdenum disulfide (MoS₂ ). Charge transfer doping is a feasible strategy for tuning the conductance properties via facile treatment. In this work, the electrical properties of few-layer MoS₂ were modulated with titanium(IV) bis(ammonium lactato) dihydroxide molecules (denoted as TALH) via physisorption. The functional groups such as electronegative hydroxyl (-OH) and carboxylate groups (-COO) included in TALH molecules are expected to induce p-doping effect through surface charge transfer when being attached to MoS₂ . The p-doping is proved by X-ray photoelectron spectroscopy (XPS) with the downshift of Mo 3d and S 2p peaks. Control experiments and density functional theory calculations validate that the p-type doping mainly originated from the -OH group in TALH, which drew electrons from MoS₂ . These results suggest that functional group-mediated p-doping effect show a path to modulate the carrier transition in MoS_2, and enrich the molecule series for device modification.

Keywords: MoS2; TALH; field-effect transistor; functional group; p-type doping.

Abstract

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