Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

Jusheng Bao; Shaoyu Zeng; Jie Dai; Xiaoshan Wang; Qiang Liu; Hai Li; Xiao Huang; Wei Huang

doi:10.1039/d1cc00015b

Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

Chem Commun (Camb). 2021 Jun 3;57(45):5590-5593. doi: 10.1039/d1cc00015b.

Authors

Jusheng Bao¹, Shaoyu Zeng¹, Jie Dai¹, Xiaoshan Wang², Qiang Liu¹, Hai Li¹, Xiao Huang¹, Wei Huang³

Affiliations

¹ Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China. iamhli@njtech.edu.cn iamxhuang@njtech.edu.cn.
² Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China. iamwhuang@nwpu.edu.cn.
³ Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China. iamhli@njtech.edu.cn iamxhuang@njtech.edu.cn and Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China. iamwhuang@nwpu.edu.cn.

PMID: 33970181
DOI: 10.1039/d1cc00015b

Abstract

SnS2 nanoplates are used as sacrificial templates to facilitate the in situ growth of intermetallic compound Pt3Sn nanoparticles. The Pt3Sn/SnS2 heterostructures show promise for selective NO2 sensing due to the favored gas adsorption and gas-solid charge transfer on Pt3Sn, combined with the optimized film conductance and formation of ohmic-type Pt3Sn/SnS2 heterointerfaces.