Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Kristjan Kalam; Raul Rammula; Peeter Ritslaid; Tanel Käämbre; Joosep Link; Raivo Stern; Guillermo Vinuesa; Salvador Dueñas; Helena Castán; Aile Tamm; Kaupo Kukli

doi:10.1088/1361-6528/abfee9

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone

Nanotechnology. 2021 May 26;32(33). doi: 10.1088/1361-6528/abfee9.

Authors

Affiliations

¹ Institute of Physics, University of Tartu, W. Ostwaldi tn 1, 50411 Tartu, Estonia.
² National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia.
³ Department of Electronics, University of Valladolid, Paseo Belén 15, E-47011 Valladolid, Spain.

PMID: 33962408
DOI: 10.1088/1361-6528/abfee9

Abstract

Atomic layer deposition method was used to grow thin films consisting of ZrO₂and MnO_xlayers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetonate and ozone process were investigated, such as the dependence of growth rate on the deposition temperature and film crystallinity. All films were partly crystalline in their as-deposited state. Zirconium oxide contained cubic and tetragonal phases of ZrO₂, while the manganese oxide was shown to consist of cubic Mn₂O₃and tetragonal Mn₃O₄phases. All the films exhibited nonlinear saturative magnetization with hysteresis, as well as resistive switching characteristics.

Keywords: atomic layer deposition; magnetic materials; resistive switching; thin films.

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