High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires

Tae Jin Yoo; Wan Sik Kim; Kyoung Eun Chang; Cihyun Kim; Min Gyu Kwon; Ji Young Jo; Byoung Hun Lee

doi:10.3390/nano11030755

High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi₂Te₃ Nanowires

Nanomaterials (Basel). 2021 Mar 17;11(3):755. doi: 10.3390/nano11030755.

Authors

Tae Jin Yoo¹, Wan Sik Kim², Kyoung Eun Chang², Cihyun Kim¹, Min Gyu Kwon², Ji Young Jo², Byoung Hun Lee¹

Affiliations

¹ Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, 77 Cheongam-ro, Nam-gu, Pohang, Gyeongbuk 37673, Korea.
² School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Korea.

Abstract

A graphene photodetector decorated with Bi₂Te₃ nanowires (NWs) with a high gain of up to 3 × 10⁴ and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi₂Te₃ nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi₂Te₃ NWs junction. Eventually, with low bandgap Bi₂Te₃ NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

Keywords: Bi2Te3 nanowires; chemical vapor deposition (CVD) graphene; graphene photodetector; infrared photodetector; photodetector.

Abstract

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