EHD-jet patterned MoS2on a high- k dielectric for high mobility in thin film transistor applications

Thi Thu Thuy Can; Hak-Lim Ko; Woon-Seop Choi

doi:10.1088/1361-6528/abed05

EHD-jet patterned MoS₂on a high- k dielectric for high mobility in thin film transistor applications

Nanotechnology. 2021 Mar 25;32(24). doi: 10.1088/1361-6528/abed05.

Authors

Thi Thu Thuy Can¹, Hak-Lim Ko², Woon-Seop Choi¹

Affiliations

¹ Department of Display Engineering, Hoseo University, Asan 31499, Republic of Korea.
² Department of Information and Communication Engineering, Hoseo University, Asan 31499, Republic of Korea.

PMID: 33764903
DOI: 10.1088/1361-6528/abed05

Abstract

Solution synthesis of MoS₂precursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoS₂pattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoS₂after a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoS₂was transferred onto high-kdielectric Al₂O₃and used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoS₂TFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 ± 2.99 cm²V^-1s^-1, 7.39 ± 0.12 × 10⁶, and 0.7 ± 0.05 V decade^-1, respectively. This technique may have promise for future applications.

Keywords: 2D materials; electrohydrodynamic jet printing; high-k dielectric; molybdenum disulfide; thin-film transistor.