Enhancing the energy barrier and hysteresis temperature in two benchtop-stable Ho(iii) single-ion magnets

Kexin Jia; Xixi Meng; Mengmeng Wang; Xiaoshuang Gou; Yu-Xia Wang; Na Xu; Wei Shi; Peng Cheng

doi:10.1039/d1cc00582k

Enhancing the energy barrier and hysteresis temperature in two benchtop-stable Ho(iii) single-ion magnets

Chem Commun (Camb). 2021 Apr 14;57(29):3607-3610. doi: 10.1039/d1cc00582k. Epub 2021 Mar 15.

Authors

Kexin Jia¹, Xixi Meng, Mengmeng Wang, Xiaoshuang Gou, Yu-Xia Wang, Na Xu, Wei Shi, Peng Cheng

Affiliation

¹ Department of Chemistry, College of Chemistry, Nankai University, Tianjin 300071, China. naxu@nankai.edu.cn pcheng@nankai.edu.cn.

PMID: 33721006
DOI: 10.1039/d1cc00582k

Abstract

The energy barrier and hysteresis temperature in two benchtop-stable D_5h-symmetry Ho^III single-ion magnets were significantly enhanced via the variation of the halogen anion. The coexistence of a high energy barrier of 418 K and hysteresis temperature of 15 K was observed in the bromide-ion containing Ho^III single-ion magnet.