Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2 Te3 ) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si2 Te3 . The Si2 Te3 -based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W-1 and 2.81 × 1012 Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.
Keywords: 2D materials; Si 2Te 3; photodetector; silicon based; transistor.
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