S/Mo ratio and petal size controlled MoS2 nanoflowers with low temperature metal organic chemical vapor deposition and their application in solar cells

Jaeseo Park; Hyeji Park; Suho Park; Nguyen Thi Thuy; Jihun Mun; Junoh Kim; Sang Jun Lee; Zahyun Ku; Sang-Woo Kang

doi:10.1088/1361-6528/abe32c

S/Mo ratio and petal size controlled MoS₂ nanoflowers with low temperature metal organic chemical vapor deposition and their application in solar cells

Nanotechnology. 2021 Feb 23;32(19):195206. doi: 10.1088/1361-6528/abe32c. Online ahead of print.

Authors

Jaeseo Park¹, Hyeji Park, Suho Park, Nguyen Thi Thuy, Jihun Mun, Junoh Kim, Sang Jun Lee, Zahyun Ku, Sang-Woo Kang

Affiliation

¹ Advanced Instrumentation Institute, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea. Science of Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea.

PMID: 33620035
DOI: 10.1088/1361-6528/abe32c

Abstract

Vertically aligned two-dimensional (2D) molybdenum disulfide nanoflowers (MoS₂ NFs) have drawn considerable attention as a novel functional material with potential for next-generation applications owing to their inherently distinctive structure and extraordinary properties. We report a simple metal organic chemical vapor deposition (MOCVD) method that can grow high crystal quality, large-scale and highly homogeneous MoS₂ NFs through precisely controlling the partial pressure ratio of H₂S reaction gas, P _SR, to Mo(CO)₆ precursor, P _MoP, at a substrate temperature of 250 °C. We investigate microscopically and spectroscopically that the S/Mo ratio, optical properties and orientation of the grown MoS₂ NFs can be controlled by adjusting the partial pressure ratio, P _SR/P _MoP. It is also shown that the low temperature MOCVD (LT-MOCVD) growth method can regulate the petal size of MoS₂ NFs through the growth time, thereby controlling photoluminescence intensity. More importantly, the MoS₂ NFs/GaAs heterojunction flexible solar cell exhibiting a power conversion efficiency of ∼1.3% under air mass 1.5 G illumination demonstrates the utility of the LT-MOCVD method that enables the direct growth of MoS₂ NFs on the flexible devices. Our work can pave the way for practical, easy-to-fabricate 2D materials integrated flexible devices in optical and photonic applications.