A synergistic interplay between dopant ALD cycles and film thickness on the improvement of the ferroelectricity of uncapped Al:HfO2nanofilms

Abstract

The Al:HfO₂ferroelectric nanofilms with different total thicknesses and distributions of Al-rich strips are prepared using atomic layer deposition (ALD) in an uncapped configuration. The synergistic interplay between the number of Al-rich layers and the thickness of total film offers the additional flexibility to boost the ferroelectricity of the resulting Al:HfO₂nanofilms. By carefully optimizing both the ALD cycles for dopant layer and the total film thickness in the preparation, the HfO₂nanofilms in post-deposition annealing can exhibit excellent ferroelectricity. The highest remanent polarization (2P_r) of 51.8μC cm^-2is obtained in a 19.4 nm thick Al:HfO₂nanofilm at the dopant concentration of 11.1 mol% with a three ALD cycles for Al-rich strips. Remarkable remanent polarization value observed in the uncapped electrode clamping film paves a new way to explore the origin of ferroelectricity in hafnium oxide nanofilms. The observed ferroelectricity of the nanofilm is affected neither by the presence of an interface between the upper electrode and the film nor the choices of the materials of upper electrode in the measurement, ensuring a high flexibility in the designing and fabrication of the relevant devices in the future.

Keywords: HfO2 thin film; atomic layer deposition; dopant ALD cycles; ferroelectric; film thickness; post-deposition annealing.