Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs3Cu2I5 Perovskite Memory

Fanju Zeng; Yongqian Tan; Wei Hu; Xiaosheng Tang; Zhongtao Luo; Qiang Huang; Yuanyang Guo; Xiaomei Zhang; Haifeng Yin; Julin Feng; Xusheng Zhao; Ben Yang

doi:10.1021/acs.jpclett.0c03763

Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free Cs₃Cu₂I₅ Perovskite Memory

J Phys Chem Lett. 2021 Feb 25;12(7):1973-1978. doi: 10.1021/acs.jpclett.0c03763. Epub 2021 Feb 17.

Authors

Fanju Zeng^{1

2}, Yongqian Tan², Wei Hu¹, Xiaosheng Tang¹, Zhongtao Luo³, Qiang Huang⁴, Yuanyang Guo¹, Xiaomei Zhang², Haifeng Yin², Julin Feng¹, Xusheng Zhao¹, Ben Yang¹

Affiliations

¹ Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
² School of Big Data Engineering, Kaili University, Kaili, Guizhou 556011, China.
³ School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China.
⁴ College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China.

PMID: 33594881
DOI: 10.1021/acs.jpclett.0c03763

Abstract

Herein, we employed lead-free Cs₃Cu₂I₅ perovskite films as the functional layers to construct Al/Cs₃Cu₂I₅/ITO memory devices and systematically investigated the impact on the corresponding resistive switching (RS) performance via adding different amounts of hydroiodic acid (HI) in Cs₃Cu₂I₅ precursor solution. The results demonstrated that the crystallinity and morphology of the Cs₃Cu₂I₅ films can be improved and the resistive switching performance can be modulated by adding an appropriate amount of HI. The obtained Cs₃Cu₂I₅ films by adding 5 μL HI exhibit the fewest lattice defects and flattest surface (RMS = 13.3 nm). Besides, the memory device, utilizing the optimized films, has a low electroforming voltage (1.44 V), a large on/off ratio (∼65), and a long retention time (10⁴ s). The RS performance impacted by adding HI, providing a scientific strategy for improving the RS performance of iodine halide perovskite-based memories.