Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Jie Gu; Qingzhu Zhang; Zhenhua Wu; Jiaxin Yao; Zhaohao Zhang; Xiaohui Zhu; Guilei Wang; Junjie Li; Yongkui Zhang; Yuwei Cai; Renren Xu; Gaobo Xu; Qiuxia Xu; Huaxiang Yin; Jun Luo; Wenwu Wang; Tianchun Ye

doi:10.3390/nano11020309

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Nanomaterials (Basel). 2021 Jan 26;11(2):309. doi: 10.3390/nano11020309.

Authors

Jie Gu^{1

2}, Qingzhu Zhang¹, Zhenhua Wu^{1

2}, Jiaxin Yao^{1

2}, Zhaohao Zhang¹, Xiaohui Zhu^{1

2}, Guilei Wang¹, Junjie Li^{1

2}, Yongkui Zhang¹, Yuwei Cai^{1

2}, Renren Xu^{1

2}, Gaobo Xu^{1

2}, Qiuxia Xu¹, Huaxiang Yin^{1

2}, Jun Luo^{1

2}, Wenwu Wang^{1

2}, Tianchun Ye^{1

2}

Affiliations

¹ Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
² School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.

Abstract

A 16-nm-L_g p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

Keywords: Si nanowire; cryo-CMOS; gate-all-around; one-dimensional hole transport.

Abstract

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