This work presents a H2S selective resistive gas sensor design based on a chemical field effect transistor (ChemFET) with open gate formed by hundreds of high temperature chemical vapour deposition (CVD) grown zinc oxide nanowires (ZnO NW). The sensing ability of pristine ZnO NWs and surface functionalized ZnO NWs for H2S is analysed systematically. ZnO NWs are functionalized by deposition of discontinuous gold (Au) nanoparticle films of different thicknesses of catalyst layer ranging from 1 to 10 nm and are compared in their gas sensing properties. All experiments were performed in a temperature stabilized small volume compartment with adjustable gas mixture at room temperature. The results allow for a well-founded understanding of signal-to-noise ratio, enhanced response, and improved limit of detection due to the Au functionalisation. Comprehension and controlled application of the beneficial effects of Au catalyst on ZnO NWs allow for the detection of very low H2S concentrations down to 10 ppb, and a theoretically estimated 500 ppt in synthetic air at room temperature.