Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Yi Wen; Xiao-Jie Xu; Meng-Ling Tao; Xiao-Fei Lu; Xiao-Chuan Deng; Xuan Li; Jun-Tao Li; Zhi-Qiang Li; Bo Zhang

doi:10.1186/s11671-020-03443-5

Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

Nanoscale Res Lett. 2020 Nov 10;15(1):211. doi: 10.1186/s11671-020-03443-5.

Authors

Yi Wen¹, Xiao-Jie Xu¹, Meng-Ling Tao¹, Xiao-Fei Lu¹, Xiao-Chuan Deng², Xuan Li¹, Jun-Tao Li³, Zhi-Qiang Li³, Bo Zhang¹

Affiliations

¹ School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.
² School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China. xcdeng@uestc.edu.cn.
³ Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Mianyang, 621900, China.

Abstract

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm² is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ V_F = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga's figure of merit of 58.8 GW/cm².

Keywords: CFM-JTE; High efficiency; Silicon carbide; Ultra-high voltage.

Abstract

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