Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

Tae-Jun Ko; Hao Li; Sohrab Alex Mofid; Changhyeon Yoo; Emmanuel Okogbue; Sang Sub Han; Mashiyat Sumaiya Shawkat; Adithi Krishnaprasad; Molla Manjurul Islam; Durjoy Dev; Yongjun Shin; Kyu Hwan Oh; Gwan-Hyoung Lee; Tania Roy; Yeonwoong Jung

doi:10.1016/j.isci.2020.101676

Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications

iScience. 2020 Oct 13;23(11):101676. doi: 10.1016/j.isci.2020.101676. eCollection 2020 Nov 20.

Authors

Tae-Jun Ko¹, Hao Li¹, Sohrab Alex Mofid¹, Changhyeon Yoo¹, Emmanuel Okogbue^{1

2}, Sang Sub Han^{1

3}, Mashiyat Sumaiya Shawkat^{1

2}, Adithi Krishnaprasad^{1

2}, Molla Manjurul Islam^{1

4}, Durjoy Dev^{1

2}, Yongjun Shin³, Kyu Hwan Oh³, Gwan-Hyoung Lee^{3

5

6

7}, Tania Roy^{1

8}, Yeonwoong Jung^{1

2

8}

Affiliations

¹ NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
² Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, USA.
³ Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, South Korea.
⁴ Department of Physics, University of Central Florida, Orlando, FL 32816, USA.
⁵ Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, South Korea.
⁶ Institute of Engineering Research, Seoul National University, Seoul, 08826, South Korea.
⁷ Institute of Applied Physics, Seoul National University, Seoul, 08826, South Korea.
⁸ Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA.

Abstract

Two-dimensional (2D) layered materials and their heterostructures have recently been recognized as promising building blocks for futuristic brain-like neuromorphic computing devices. They exhibit unique properties such as near-atomic thickness, dangling-bond-free surfaces, high mechanical robustness, and electrical/optical tunability. Such attributes unattainable with traditional electronic materials are particularly promising for high-performance artificial neurons and synapses, enabling energy-efficient operation, high integration density, and excellent scalability. In this review, diverse 2D materials explored for neuromorphic applications, including graphene, transition metal dichalcogenides, hexagonal boron nitride, and black phosphorous, are comprehensively overviewed. Their promise for neuromorphic applications are fully discussed in terms of material property suitability and device operation principles. Furthermore, up-to-date demonstrations of neuromorphic devices based on 2D materials or their heterostructures are presented. Lastly, the challenges associated with the successful implementation of 2D materials into large-scale devices and their material quality control will be outlined along with the future prospect of these emergent materials.

Keywords: Electrical Property; Electronic Engineering; Materials Science.

Publication types

Review