Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz

Biswadev Roy; Marvin H Wu; Branislav Vlahovic

doi:10.1016/j.dib.2020.106419

Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz

Data Brief. 2020 Oct 17:33:106419. doi: 10.1016/j.dib.2020.106419. eCollection 2020 Dec.

Authors

Biswadev Roy¹, Marvin H Wu¹, Branislav Vlahovic¹

Affiliation

¹ Department of Mathematics & Physics, North Carolina Central University, 1900 Concord St., Durham, NC 27707, United States.

Abstract

A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2″ diameter direct-bandgap 5 µm silicon doped 10⁵ Ω-cm GaN on 434 µm sapphire is a commercial sample and was mounted in the path of collimated BWO generated millimeter wave beam with spot size ∼3 mm and rotated 64.5° to millimeter wave reflected energy into an antenna fed zero-bias Schottky barrier diode (ZBD), a negative polarity detector with responsivity 3.6 V/mW. Data obtained pertain to photon energies between 400 and 700 µeV (107.35-165 GHz). Data contains the 30-sample average and respective standard deviations for reference (mirror) and N-GaN reflected voltages. Anomalies in d.c. reflection coefficients (based on the raw data) are identified for users.

Keywords: Millimeter; Oscillator; Quasi-optical; Reflection; Semi-insulating; Voltage.