Na4CdGe2S7: A Sodium-Rich Quaternary Wide-Band-Gap Chalcogenide with Two-Dimensional [Ge2CdS7]∞ Layers

Shengzi Zhang; Fei Liang; Pifu Gong; Yi Yang; Zheshuai Lin

doi:10.1021/acs.inorgchem.0c02952

Na₄CdGe₂S₇: A Sodium-Rich Quaternary Wide-Band-Gap Chalcogenide with Two-Dimensional [Ge₂CdS₇]_∞ Layers

Inorg Chem. 2020 Nov 16;59(22):16132-16136. doi: 10.1021/acs.inorgchem.0c02952. Epub 2020 Oct 28.

Authors

Shengzi Zhang^{1

2}, Fei Liang^{1

2}, Pifu Gong^{1

2}, Yi Yang^{1

2}, Zheshuai Lin^{1

2

3}

Affiliations

¹ Center for Crystal Research and Development, Key Lab Functional Crystals and Laser Technology of Chinese Academy of Sciences, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
² University of Chinese Academy of Sciences, Beijing 100190, P. R. China.
³ Center of Materials Science and Optoelectronics Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.

PMID: 33112600
DOI: 10.1021/acs.inorgchem.0c02952

Abstract

Metal chalcogenides are an attractive subject for investigation owing to their wide application in optoelectronics. Here, we report the discovery of a new cadmium-based quaternary sulfide, Na₄CdGe₂S₇, with a wide band gap of 3.35 eV. The microscopic structure of this compound features two-dimensional [Ge₂CdS₇]_∞ layers, which were first found in metal sulfides. Remarkably, the Na/S ratio in Na₄CdGe₂S₇ exceeds 50%, suggesting that it would have ecofriendly electrical applications, such as in sodium-ion-battery electrodes and fast ion conductors.