The development of integrated vertical III-V nanowire (NW) stimulated emitters in silicon photonics while achieving an efficient light coupling through vertical III-V NW lasers into horizontal optical silicon waveguides is demanding. This is mainly due to the directionality and contradiction of the simultaneously satisfied low threshold stimulated emission conditions of the vertical NWs and efficient light coupling from the NW emitters into the horizontal silicon waveguide. However, we propose a new, to the best of our knowledge, design by taking advantage of resonating features of ring structures and theoretically demonstrate that an interfacial ring resonator between GaAs NW emitters and the silicon waveguide achieves a coupling efficiency up to about 70% at a given wavelength. We also show that the interfacial resonator enables us to adjust the coupling efficiency from about 10% to over 70%. The adjustable coupling efficiency might also be a solution to compromise between the low threshold stimulated emission of NWs and efficient light coupling for realizing efficient silicon couplers based on integrated III-V NW lasers in silicon photonics. Besides the simple fabrication process compared to counterparts, we believe that the novel structure is promising for future optical on-chip data communication in silicon photonics, and the results are expandable to varying wavelengths and materials.