The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Tao Zhang; Yixian Shen; Qian Feng; Xusheng Tian; Yuncong Cai; Zhuangzhuang Hu; Guangshuo Yan; Zhaoqing Feng; Yachao Zhang; Jing Ning; Yongkuan Xu; Xiaozheng Lian; Xiaojuan Sun; Chunfu Zhang; Hong Zhou; Jincheng Zhang; Yue Hao

doi:10.1186/s11671-020-03397-8

The Investigation of Hybrid PEDOT:PSS/β-Ga₂O₃ Deep Ultraviolet Schottky Barrier Photodetectors

Nanoscale Res Lett. 2020 Aug 14;15(1):163. doi: 10.1186/s11671-020-03397-8.

Authors

Tao Zhang^{1

2}, Yixian Shen^{1

2}, Qian Feng^{3

4}, Xusheng Tian^{1

2}, Yuncong Cai^{1

2}, Zhuangzhuang Hu^{1

2}, Guangshuo Yan^{1

2}, Zhaoqing Feng^{1

2}, Yachao Zhang^{1

2}, Jing Ning^{1

2}, Yongkuan Xu⁵, Xiaozheng Lian⁵, Xiaojuan Sun⁶, Chunfu Zhang^{1

2}, Hong Zhou^{1

2}, Jincheng Zhang^{7

8}, Yue Hao^{1

2}

Affiliations

¹ State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.
² Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, 710071, China.
³ State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. qfeng@mail.xidian.edu.cn.
⁴ Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, 710071, China. qfeng@mail.xidian.edu.cn.
⁵ China Electronics Technology Group Corporation No. 46 Research Institute, Tianjin, 300220, China.
⁶ State Key Laboratory of Luminescence and Applications, Changchun Institute of Opeics, Chinese Academy of Sciences, Changchun, 130033, China.
⁷ State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China. jchzhang@xidian.edu.cn.
⁸ Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi'an, 710071, China. jchzhang@xidian.edu.cn.

Abstract

In this paper, the hybrid β-Ga₂O₃ Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ_b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga₂O₃ interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R_{254 nm}/R_{400 nm} up to 1.26 × 10³ are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga₂O₃ Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

Keywords: Hybrid Schottky diodes; PEDOT:PSS; Photodetector; β-Ga2O3.

Abstract

Grants and funding