Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS2 Monolayer

Sajid Husain; Xin Chen; Rahul Gupta; Nilamani Behera; Prabhat Kumar; Tomas Edvinsson; F García-Sánchez; Rimantas Brucas; Sujeet Chaudhary; Biplab Sanyal; Peter Svedlindh; Ankit Kumar

doi:10.1021/acs.nanolett.0c01955

Large Damping-Like Spin-Orbit Torque in a 2D Conductive 1T-TaS₂ Monolayer

Nano Lett. 2020 Sep 9;20(9):6372-6380. doi: 10.1021/acs.nanolett.0c01955. Epub 2020 Aug 17.

Authors

Affiliations

¹ Department of Materials Science, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden.
² Department of Physics and Astronomy, Materials Theory, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden.
³ Department of Thin Films and Nanostructures, Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Prague, Czech Republic.
⁴ Departamento de Física Aplicada, University of Salamanca, Pza de la Merced s/n, 37008 Salamanca, Spain.
⁵ Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India.

Abstract

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS₂ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS₂(0.88)/Py(7), and the spin Hall conductivity $(14.9 \times 10^{5} \frac{ℏ}{2 e} Ω^{- 1} m^{- 1})$ is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS₂/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin-orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices.

Keywords: Damping-like torque; Planar Hall effect; Spin-torque ferromagnetic resonance; Transition-metal dichalcogenide.