For quantum-dot photodiodes comprising an electron-transporting layer assembled of ZnO nanoparticles, the light emitter/absorber generally exhibits enhanced optoelectronic performance after the device is shelf-aged. To understand the so-called positive aging effect, the optoelectronic properties of ZnO nanoparticles are investigated at the thin film and device level as a function of aging time. It is evidenced that the aging process is driven by a surface-stabilizing mechanism of ZnO nanoparticles, in which the active surface adsorption sites for oxygen are gradually but irreversibly stabilized, i.e.. with surface termination of HO-ZnO, leading to reduced nonradiative recombination and increased built-in potential in the adjacent photoactive layer. This work provides insight into new synthetic routes for minimizing the negative impact caused by the aging process.