Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded in synthesizing a new compound Bi12 Rh3 Sn3 I9 , which is structurally closely related to Bi14 Rh3 I9 - a stable, layered material. In fact, Bi14 Rh3 I9 is the first experimentally supported weak 3D TI. Both structures are composed of well-defined intermetallic layers of ∞ 2 [(Bi4 Rh)3 I]2+ with topologically protected electronic edge-states. The fundamental difference between Bi14 Rh3 I9 and Bi12 Rh3 Sn3 I9 lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi14 Rh3 I9 are isolated by ∞ 1 [Bi2 I8 ]2- chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to ∞ 2 [Sn3 I8 ]2- layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.
Keywords: crystal growth; crystal structure; topological band gap; topological insulators; weak topological insulators.
© 2020 The Authors. Published by Wiley-VCH GmbH.