Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal-Organic Chemical Vapor Deposition

Chunyang Jia; Dae-Woo Jeon; Jianlong Xu; Xiaoyan Yi; Ji-Hyeon Park; Yiyun Zhang

doi:10.3390/nano10061031

Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga₂O₃ Nanowires on Sapphire Substrates by Metal-Organic Chemical Vapor Deposition

Nanomaterials (Basel). 2020 May 28;10(6):1031. doi: 10.3390/nano10061031.

Authors

Chunyang Jia^{1

2}, Dae-Woo Jeon³, Jianlong Xu⁴, Xiaoyan Yi^{1

2}, Ji-Hyeon Park³, Yiyun Zhang^{1

2}

Affiliations

¹ R&D Center for Solid-state Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
³ Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, Korea.
⁴ Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China.

Abstract

In this work, we have achieved synthesizing large-area high-density β-Ga₂O₃ nanowires on c-plane sapphire substrate by metal-organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga₂O₃ nanowires consist of a single-crystal monoclinic structure, which exhibits strong (201) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga₂O₃ nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga₂O₃ nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga₂O₃ nanowires is also presented.

Keywords: MOCVD; nanowires; β-Ga2O3.