Atmospheric pressure chemical vapor deposition (APCVD) has been used extensively for synthesizing two-dimensional (2D) materials because of its low cost and promise for high-quality monolayer crystal synthesis. However, the understanding of the reaction mechanism and the key parameters affecting the APCVD processes is still in its embryonic stage. Hence, the scalability of the APCVD method in achieving large-scale continuous film remains very poor. Here, we use MoSe2 as a model system and present a fluid guided growth strategy for understanding and controlling the growth of 2D materials. Through the integration of experiment and computational fluid dynamics (CFD) analysis in the full-reactor scale, we identified three key parameters, precursor mixing, fluid velocity, and shear stress, which play a critical role in the APCVD process. By modifying the geometry of the growth setup to enhance precursor mixing and decrease nearby velocity shear rate and adjusting flow direction, we have successfully obtained inch-scale monolayer MoSe2. This unprecedented success of achieving scalable 2D materials through fluidic design lays the foundation for designing new CVD systems to achieve the scalable synthesis of nanomaterials.
Keywords: atmospheric pressure chemical deposition; computational fluid dynamics; fluid guided; fluid velocity; precursor mixing; shear stress; two-dimensional materials.