High-Performance Devices Based on InSe-In1- xGa x Se Van der Waals Heterojunctions

Miaomiao Yu; Yunxia Hu; Feng Gao; Mingjin Dai; Lifeng Wang; PingAn Hu; Wei Feng

doi:10.1021/acsami.0c03206

High-Performance Devices Based on InSe-In_{1- x}Ga _x Se Van der Waals Heterojunctions

ACS Appl Mater Interfaces. 2020 Jun 3;12(22):24978-24983. doi: 10.1021/acsami.0c03206. Epub 2020 May 19.

Authors

Miaomiao Yu¹, Yunxia Hu², Feng Gao², Mingjin Dai², Lifeng Wang³, PingAn Hu², Wei Feng¹

Affiliations

¹ College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China.
² School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China.
³ Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia.

PMID: 32378872
DOI: 10.1021/acsami.0c03206

Abstract

Multilayer InSe is a promising material for high-performance optoelectronic applications because of its small direct band gap and good light absorption. However, as a photoconductive photodetector, multilayer InSe photodetectors endure large dark current and high driving power. In this work, we study the electrical properties of InGaSe alloys and demonstrate the high-performance devices based on multilayer InSe-In_0.24Ga_0.76Se van der Waals heterojunctions (vdWHs). The electrical properties of InGaSe alloy samples strongly depend on the ratio of In to Ga, and the In_0.24Ga_0.76Se alloy shows a p-type transport behavior. More importantly, a multilayer InSe-In_0.24Ga_0.76Se vdWH device is demonstrated as a high-performance forward diode, photodiode, and self-powered photodetector (SPPD). The multilayer InSe-In_0.24Ga_0.76Se diode shows a high forward rectification ratio of over 10³ without gate modulation at room temperature, which is superior to most of the multilayer vdWH devices. Moreover, the vdWH photodiode has a broadband photoresponse spectrum (400-1000 nm) and a high-performance photoresponse. The light switching ratio, detectivity (D*), and responsivity (R) are 10³, 10¹² Jones, and 49 A W^-1 for 400 nm illumination, respectively. Furthermore, the vdWH SPPD also shows a sensitive photoresponse to a broadband spectrum of 400-1000 nm. Our work offers an opportunity for multilayer vdWH device applications in high-performance electronic and optoelectronic devices.

Keywords: In1−xGaxSe alloys; diode; heterostructure; multilayer InSe; photodetector.