In the semiconductor manufacturing process, metallic contaminants remain on the surface of the silicon wafer, which has a serious effect on the physical and electrical characteristics of the semiconductor device. In particular, silver has high electrical conductivity and large reducibility, and it is not easily removed causing a great deal of damage in small amounts. Therefore, it is important to prevent contamination by lowering the silver ion concentration in the etching agent in the wet etching process. In this study, to prepare an effective silver ion adsorbent, glycidyl methacrylate (GMA) was grafted onto polypropylene (PP) through electron beam irradiation. Ethylenediamine (EDA) and diethylenetriamine (DETA) were introduced into the epoxide group of GMA via amination. The prepared adsorbent was packed in a holder and connected to a circulation pump, and 1 L of 200 ppm silver ion solution was circulated at room temperature for 12 hours. The adsorbents aminated with EDA and DETA showed adsorption capacities of 2.0587 mmol/g and 2.3645 mmol/g, respectively.