Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Jie Wu; Fengmei Gao; Gang Shao; Zhentao Du; Weiyou Yang; Lin Wang; Zhenxia Wang; Shanliang Chen

doi:10.1021/acsami.0c04111

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

ACS Appl Mater Interfaces. 2020 May 13;12(19):21903-21911. doi: 10.1021/acsami.0c04111. Epub 2020 Apr 30.

Authors

Jie Wu^{1

2}, Fengmei Gao², Gang Shao³, Zhentao Du², Weiyou Yang², Lin Wang², Zhenxia Wang¹, Shanliang Chen²

Affiliations

¹ Institute of New Carbon Materials, Taiyuan University of Technology, Taiyuan 030024, P.R. China.
² Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China.
³ School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China.

PMID: 32319289
DOI: 10.1021/acsami.0c04111

Abstract

Improving the sensitivity of the piezoresistive behavior of semiconductor nanostructures is critically important because it is one of the keys to explore advanced pressure sensors with desired sensitivity. Herein, we reported a strategy for improving the piezoresistive behavior of SiC nanowire by coupling with the piezoelectric effect of ZnO nanolayers, which were grown by an atomic layer deposition approach. As a result, the detected current of the as-constructed ZnO/SiC heterojunction nanowires is 6 times more than SiC nanowires, suggesting its substantially improved sensitivity. Moreover, the measured ΔR/R₀ value and gauge factor (GF) of the ZnO/SiC heterojunction nanowires could be up to 0.82 and 50.93, respectively, which was profoundly higher than those of the SiC counterpart and most of reported positive piezoresistive SiC sensors.

Keywords: SiC; gauge factor; nanowires; piezoresistive behavior; sensitivity.