Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

Peixin Qin; Zexin Feng; Xiaorong Zhou; Huixin Guo; Jinhua Wang; Han Yan; Xiaoning Wang; Hongyu Chen; Xin Zhang; Haojiang Wu; Zengwei Zhu; Zhiqi Liu

doi:10.1021/acsnano.0c02325

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

ACS Nano. 2020 May 26;14(5):6242-6248. doi: 10.1021/acsnano.0c02325. Epub 2020 Apr 21.

Authors

Affiliations

¹ School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
² Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.

PMID: 32298083
DOI: 10.1021/acsnano.0c02325

Abstract

We report the successful fabrication of noncollinear antiferromagnetic D0₁₉ Mn₃Ge thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic Mn₃Ge. More importantly, we integrate the Mn₃Ge thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic Mn₃Ge for information storage applications.

Keywords: Mn3Ge; Weyl fermions; anomalous Hall effect; memory devices; noncollinear antiferromagnets.