Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements

K Sobczak; J Borysiuk; P Strąk; R Jakieła; K Koroński; A Kaminska; E Monroy; S Krukowski

doi:10.1016/j.micron.2020.102864

Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements

Micron. 2020 Jul:134:102864. doi: 10.1016/j.micron.2020.102864. Epub 2020 Mar 30.

Authors

K Sobczak¹, J Borysiuk², P Strąk³, R Jakieła⁴, K Koroński⁴, A Kaminska⁵, E Monroy⁶, S Krukowski³

Affiliations

¹ Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw, 02089 Warsaw, Poland. Electronic address: ksobczak@cnbc.uw.edu.pl.
² Faculty of Physics, University of Warsaw, Pasteura 5, 02093 Warsaw, Poland.
³ Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
⁴ Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 01-142 Warsaw, Poland.
⁵ Institute of Physics Polish Academy of Sciences, Al. Lotnikow 32/46, 01-142 Warsaw, Poland; Cardinal Stefan Wyszynski University, Faculty of Mathematics and Natural Sciences, School of Exact Sciences, Dewajtis 5, 01-815 Warsaw, Poland.
⁶ Universite Grenoble-Alpes, CEA Grenoble, INAC-PHELIQS, 17 av. des Martyrs, 38000 Grenoble, France.

PMID: 32251927
DOI: 10.1016/j.micron.2020.102864

Abstract

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3×10¹⁹cm^-3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).

Keywords: Multiple-quantum-well; Nitrides; Si doping.