Recent Process of Flexible Transistor-Structured Memory

Abstract

Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.

Keywords: charge-trap transistor memory; ferroelectric field-effect transistor memory; floating-gate transistor memory; optical memory transistors; transistor-structured artificial synapses.