The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3

Hemian Yi; Simeon J Gilbert; Alexey Lipatov; Alexander Sinitskii; Jose Avila; Jehad Abourahma; Takashi Komesu; Maria C Asensio; Peter A Dowben

doi:10.1088/1361-648X/ab832c

The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS₃ compared to TiS₃

J Phys Condens Matter. 2020 Jul 8;32(29):29LT01. doi: 10.1088/1361-648X/ab832c.

Authors

Hemian Yi¹, Simeon J Gilbert, Alexey Lipatov, Alexander Sinitskii, Jose Avila, Jehad Abourahma, Takashi Komesu, Maria C Asensio, Peter A Dowben

Affiliation

¹ Synchrotron SOLEIL and Université Paris-Saclay, L'Orme des Merisiers, BP48, 91190 Saint-Aubin, France. Department of Physics, The Pennsylvania State University, University Park, PA 16802, United States of America.

PMID: 32209749
DOI: 10.1088/1361-648X/ab832c

Abstract

The band structure of the quasi-one-dimensional transition metal trichalcogenide ZrS₃(001) was investigated using nanospot angle resolved photoemission spectroscopy (nanoARPES) and shown to have many similarities with the band structure of TiS₃(001). We find that ZrS₃, like TiS₃, is strongly n-type with the top of the valence band ∼1.9 eV below the Fermi level, at the center of the surface Brillouin zone. The nanoARPES spectra indicate that the top of the valence band of the ZrS₃(001) is located at [Formula: see text]. The band structure of both TiS₃ and ZrS₃ exhibit strong in-plane anisotropy, which results in a larger hole effective mass along the quasi-one-dimensional chains than perpendicular to them.