Directional Change of Interfacial Electric Field by Carbon Insertion in Heterojunction System TiO2/WO3

ACS Appl Mater Interfaces. 2020 Apr 1;12(13):15239-15245. doi: 10.1021/acsami.0c00669. Epub 2020 Mar 17.

Abstract

Z-scheme transfer is an ideal photocatalytic system with stronger redox ability, but its design and construction still lack understanding. Herein, the work function difference and the band bending are found to be the determining factors for the construction of the Z-scheme transfer mechanism of photoexcited charges in TiO2/WO3. The control of work function and band bending achieved by carbon insertion results from the hybridization of orbitals and redistribution of electron density, as demonstrated by ultraviolet photoelectron spectroscopy and photocatalytic analysis. The heterojunction system, TiO2/WO3, with controlled work function and band bending, shows 2 times faster OH radical formation rate (0.011 μmol min-1) compared to the undisturbed system. First-principles calculation reveals that the changes in work function and band bending result in an interfacial electric field, which shifts the charge transfer mechanism from type II to Z-scheme. This work proves that the design of work function and band bending allows reconstructing charge transfer mechanism by forming the interfacial electric field in heterojunction systems.

Keywords: Fermi level; carbon dopant; electric field; heterojunction; interface; photocatalyst.