Improved Performance of CH3NH3PbI3- xCl x Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

Fei Xia; Ying Xu; Bixin Li; Wei Hui; Shiyang Zhang; Lin Zhu; Yingdong Xia; Yonghua Chen; Wei Huang

doi:10.1021/acsami.9b22732

Improved Performance of CH₃NH₃PbI_{3- x}Cl _x Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

ACS Appl Mater Interfaces. 2020 Apr 1;12(13):15439-15445. doi: 10.1021/acsami.9b22732. Epub 2020 Mar 17.

Authors

Fei Xia¹, Ying Xu¹, Bixin Li^{1

2}, Wei Hui¹, Shiyang Zhang², Lin Zhu¹, Yingdong Xia¹, Yonghua Chen¹, Wei Huang^{1

3

4}

Affiliations

¹ Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China.
² Department of Science Education, Laboratory of College Physics, Hunan First Normal University, 1015 Fenglin Third Road, Changsha 410205, China.
³ Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China.
⁴ Key Laboratory for Organic Electronics and Information Displays (KLOEID), & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.

PMID: 32148014
DOI: 10.1021/acsami.9b22732

Abstract

The rapidly growing demand for fast information storage and processing has driven the development of resistive random access memories (RRAMs). Recently, RRAMs based on organometal halide perovskite materials have been reported to have promising memory properties, which are essential for next-generation memory devices. In this study, a hybrid two-dimensional/three-dimensional (2D/3D) perovskite heterostructure has been created by depositing n-butylammonium iodide on top of the CH₃NH₃PbI_3-xCl_x (MAPbI_3-xCl_x) surface. The perovskite film is fabricated by a facile one-step spin-coating method with room-temperature molten salt methylammonium acetate in the air. Resistive switching memory devices with a 2D/3D perovskite heterostructure exhibit a significantly improved switching window (ON/OFF ratio over 10³) with a lower operation voltage compared with their 3D counterparts. The 2D/3D perovskite heterostructure is advantageous for fabricating uniform-crystalline-grain, highly compact structures and can passivate defect states for the MAPbI_3-xCl_x film and the interface, which results in improved memory properties. These results provide a new perspective for developing high-performance perovskite-based memory devices.

Keywords: 2D/3D perovskite heterostructure; CH3NH3PbI3−xClx film; carrier transport; defect; passivation; resistive random access memory.