In the article, we report the photoluminescence (PL) properties of D and S defects induced by Si+/Ni+ ions co-implanting into the top Si film of the silicon-on-insulator (SOI) wafer. Variable-temperature PL spectra of these co-implanted SOI samples indicate that the light emitting from the D defects can be observed as high as 273 K. In comparison with the other ion-implantation, the Si+/Ni+ ion-co-implantation optimizes luminescent temperature stability of the both D and S defects and purifies the S defect type in silicon then effectively restrains the spectral broadening of the S-line in PL spectra. The depth distribution of the D and S defects along the normal direction of SOI surface at the corresponding ion-implantation energy has been well depicted by detecting the PL signals of the layer-by-layer etched SOI surface, respectively. These results provide valuable information to fabricate SOI-based infrared light sources for optical fiber communications.