Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice

Basudev Pradhan; Sonali Das; Jinxin Li; Farzana Chowdhury; Jayesh Cherusseri; Deepak Pandey; Durjoy Dev; Adithi Krishnaprasad; Elizabeth Barrios; Andrew Towers; Andre Gesquiere; Laurene Tetard; Tania Roy; Jayan Thomas

doi:10.1126/sciadv.aay5225

Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice

Sci Adv. 2020 Feb 12;6(7):eaay5225. doi: 10.1126/sciadv.aay5225. eCollection 2020 Feb.

Authors

Basudev Pradhan¹, Sonali Das¹, Jinxin Li², Farzana Chowdhury¹, Jayesh Cherusseri¹, Deepak Pandey³, Durjoy Dev^{1

4}, Adithi Krishnaprasad^{1

4}, Elizabeth Barrios^{1

3}, Andrew Towers^{1

5}, Andre Gesquiere^{1

2

5}, Laurene Tetard^{1

3

4}, Tania Roy^{1

3}, Jayan Thomas^{1

2

3}

Affiliations

¹ NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, USA.
² CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, FL 32816, USA.
³ Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA.
⁴ Department of Physics, University of Central Florida, Orlando, FL 32816, USA.
⁵ Department of Chemistry, University of Central Florida, Orlando, FL 32816, USA.

Abstract

Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many optoelectronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 × 10⁸ AW^-1 and specific detectivity of 4.72 × 10¹⁵ Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.

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