Newly Developed Broadband Antireflective Nanostructures by Coating a Low-Index MgF2 Film onto a SiO2 Moth-Eye Nanopattern

Gang Yeol Yoo; Naufan Nurrosyid; SeungJe Lee; Youngsoon Jeong; Ilsun Yoon; Changwook Kim; Woong Kim; Sung-Yeon Jang; Young Rag Do

doi:10.1021/acsami.9b19871

Newly Developed Broadband Antireflective Nanostructures by Coating a Low-Index MgF₂ Film onto a SiO₂ Moth-Eye Nanopattern

ACS Appl Mater Interfaces. 2020 Mar 4;12(9):10626-10636. doi: 10.1021/acsami.9b19871. Epub 2020 Feb 19.

Authors

Gang Yeol Yoo¹, Naufan Nurrosyid², SeungJe Lee³, Youngsoon Jeong⁴, Ilsun Yoon⁴, Changwook Kim³, Woong Kim¹, Sung-Yeon Jang², Young Rag Do³

Affiliations

¹ Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
² School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan 44919, Republic of Korea.
³ Department of Chemistry, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Republic of Korea.
⁴ Department of Chemistry, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea.

PMID: 32030970
DOI: 10.1021/acsami.9b19871

Abstract

A newly developed nanopatterned broadband antireflective (AR) coating was fabricated on the front side of a glass/indium tin oxide/perovskite solar cell (PSC) by depositing a single interference layer onto a two-dimensional (2D)-patterned moth-eye-like nanostructure. The optimized developed AR nanostructure was simulated in a finite-difference time domain analysis. To realize the simulated developed AR nanostructure, we controlled the SiO₂ moth-eye structure with various diameters and heights and a MgF₂ single layer with varying thicknesses by sequentially performing nanosphere lithography, reactive ion etching, and electron-beam evaporation. Optimization of the developed AR nanostructure, which has a 100 nm-thick MgF₂ film coated onto the SiO₂ moth-eye-like nanostructure (diameter 165 nm and height 400 nm), minimizes the reflection loss throughout the visible range. As a result, the short-circuit current density (J_SC) of the newly AR-coated PSC increases by 11.80%, while the open-circuit voltage (V_OC) remains nearly constant. Therefore, the power conversion efficiency of the newly developed AR-decorated PSC increases by 12.50%, from 18.21% for a control sample to 20.48% for the optimum AR-coated sample. These results indicate that the newly developed MgF₂/SiO₂ AR nanostructure can provide an advanced platform technology that reduces the Fresnel loss and therefore increases the possibility of the commercialization of glass-based PSCs.

Keywords: MgF2; antireflection; finite-difference time domain; moth eye; single-layer interference.