The polarization reversal characteristics were measured by fabricating a device with top electrode/n-type semiconductor/ferroelectric/bottom electrode structure. It was observed that the hysteresis curves were changed according to the polarity of the applied voltage. When a positive voltage was applied, depolarization was hardly observed. However, a significant depolarization occurred when a negative voltage was applied. An attempt was made to set up an equivalent circuit using a Schottky diode to model the semiconductor-ferroelectric structure. This study is expected to be useful for setting protocol of electronic device composed of semiconductor-ferroelectric hybrid structure.