We fabricated Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells using aqueous spray based deposition, which is inexpensive and covers a large area. To apply the sprayed film to a photoabsorber of a solar cell, post-sulfo-selenization was carried out. Through the sulfo-selenization process, we were able to fabricate various S-alloyed CIGSSe films from S/(S + Se) = 0 (S-0.0) to S/(S + Se) = 0.4 (S-0.4). CIGSSe solar cells were made with the S-alloyed CIGSSe absorbers. Power conversion efficiency of CIGSSe solar cell was found to be increased with S-alloying up to S-0.3, and the best efficiency of 10.89% was obtained with the S-0.3 CIGSSe absorber. Comparison study of S-alloyed CIGSSe solar cells showed that enhanced efficiency in S-0.3 solar cell is due to the increased open-circuit voltage and an improved fill factor, which is induced by S-alloying. In addition, admittance spectroscopy revealed that the defect density of the deep level was developed in the S-alloyed S-0.3 CIGSSe absorber. However, the defect density was observed to be rather reduced. Details of characterization and analysis results are discussed in this paper.
Keywords: CIGSSe; band gap tuning; solar cell; spray pyrolysis; sulfur-alloying.