Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite

Jia Lin; Hong Chen; Yang Gao; Yao Cai; Jianbo Jin; Ahmed S Etman; Joohoon Kang; Teng Lei; Zhenni Lin; Maria C Folgueras; Li Na Quan; Qiao Kong; Matthew Sherburne; Mark Asta; Junliang Sun; Michael F Toney; Junqiao Wu; Peidong Yang

doi:10.1073/pnas.1907576116

Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite

Proc Natl Acad Sci U S A. 2019 Nov 19;116(47):23404-23409. doi: 10.1073/pnas.1907576116. Epub 2019 Nov 4.

Authors

Jia Lin^{1

2}, Hong Chen^{1

3

4}, Yang Gao^{5

6}, Yao Cai^{5

6}, Jianbo Jin¹, Ahmed S Etman⁷, Joohoon Kang^{1

8

9

10

11}, Teng Lei¹, Zhenni Lin^{5

6}, Maria C Folgueras^{5

6}, Li Na Quan^{1

6}, Qiao Kong¹, Matthew Sherburne^{1

6}, Mark Asta^{1

6}, Junliang Sun⁷, Michael F Toney³, Junqiao Wu^{12

6}, Peidong Yang^{13

5

6

8}

Affiliations

¹ Department of Chemistry, University of California, Berkeley, CA 94720.
² Department of Physics, Shanghai University of Electric Power, Shanghai 200090, China.
³ Stanford Synchrotron Radiation Lightsource, Stanford Linear Accelerator Center National Accelerator Laboratory, Menlo Park, CA 94025.
⁴ School of Environmental Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
⁵ Department of Materials Science and Engineering, University of California, Berkeley, CA 94720.
⁶ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
⁷ Department of Materials and Environmental Chemistry, Stockholm University, SE-10691 Stockholm, Sweden.
⁸ Kavli Energy NanoScience Institute, University of California, Berkeley, CA 94720.
⁹ Center for NanoMedicine, Institute for Basic Science, Seoul 34126, Korea.
¹⁰ Yonsei Institute for Basic Science, Yonsei University, Seoul 34126, Korea.
¹¹ School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
¹² Department of Materials Science and Engineering, University of California, Berkeley, CA 94720; wuj@berkeley.edu p_yang@berkeley.edu.
¹³ Department of Chemistry, University of California, Berkeley, CA 94720; wuj@berkeley.edu p_yang@berkeley.edu.

Abstract

Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In⁺/In³⁺) inorganic halide perovskite with the composition of Cs₂In(I)In(III)Cl₆ in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

Keywords: charge ordered; halide perovskite; high pressure; inorganic; phase transition.