Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Duc V Dinh; Nan Hu; Yoshio Honda; Hiroshi Amano; Markus Pristovsek

doi:10.1038/s41598-019-52067-y

Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

Sci Rep. 2019 Nov 1;9(1):15802. doi: 10.1038/s41598-019-52067-y.

Authors

Duc V Dinh¹, Nan Hu², Yoshio Honda³, Hiroshi Amano^{3

4}, Markus Pristovsek³

Affiliations

¹ Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan. duc.vn.dinh@gmail.com.
² School of Engineering, Nagoya University, Nagoya, 464-8603, Japan.
³ Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, 464-8601, Japan.
⁴ Akasaki Research Center, Nagoya University, Nagoya, 464-8603, Japan.

Abstract

Growth of Al_xGa_1-xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ([Formula: see text]3) and ([Formula: see text]), as well as nonpolar ([Formula: see text]) and ([Formula: see text]) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.