All-optical switch and logic gates based on hybrid silicon-Ge2Sb2Te5 metasurfaces

Zhaojian Zhang; Junbo Yang; Wei Bai; Yunxin Han; Xin He; Jie Huang; Dingbo Chen; Siyu Xu; Wanlin Xie

doi:10.1364/AO.58.007392

All-optical switch and logic gates based on hybrid silicon-Ge₂Sb₂Te₅ metasurfaces

Appl Opt. 2019 Sep 20;58(27):7392-7396. doi: 10.1364/AO.58.007392.

Authors

Zhaojian Zhang, Junbo Yang, Wei Bai, Yunxin Han, Xin He, Jie Huang, Dingbo Chen, Siyu Xu, Wanlin Xie

PMID: 31674387
DOI: 10.1364/AO.58.007392

Abstract

We numerically propose a hybrid metasurface (MS) to realize all-optical switch and logic gates in the shortwave infrared (SWIR) band. Such MS consists of one silicon rod and one Ge₂Sb₂Te₅ (GST) rod pair. Utilizing the transition from an amorphous state to a crystalline state of GST, such MS can produce an electromagnetically induced transparency (EIT) analogue with active control. Based on this, we realize all-optical switching at 1770 nm with a modulation depth of 84%. Besides, three different logic gates, NOT, NOR and OR, can also be achieved in this metadevice simultaneously. Thanks to the reversible and fast phase transition process of GST, this device possesses reconfigurable ability as well as fast response time, and has potential applications in future optical networks.