Magneto-Memristive Switching in a 2D Layer Antiferromagnet

Hyun Ho Kim; Shengwei Jiang; Bowen Yang; Shazhou Zhong; Shangjie Tian; Chenghe Li; Hechang Lei; Jie Shan; Kin Fai Mak; Adam W Tsen

doi:10.1002/adma.201905433

Magneto-Memristive Switching in a 2D Layer Antiferromagnet

Adv Mater. 2020 Jan;32(2):e1905433. doi: 10.1002/adma.201905433. Epub 2019 Oct 24.

Authors

Affiliations

¹ Institute for Quantum Computing, Department of Chemistry, and Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada.
² School of Applied and Engineering Physics, Department of Physics and Kavli Institute, for Nanoscale Science, Cornell University, Ithaca, NY, 14853, USA.
³ Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872, China.

PMID: 31647588
DOI: 10.1002/adma.201905433

Abstract

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI₃ , a natural layer antiferromagnet, is reported here. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field and electric-field switching of magnetization even in multilayer samples.

Keywords: 2D magnetism; chromium triiodide; memristive switching; van der Waals heterostructures.

Abstract

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