Comment on "Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb"
Phys Rev Lett
.
2019 Sep 13;123(11):119601.
doi: 10.1103/PhysRevLett.123.119601.
Authors
Bo Yang
1
,
Xianghe Peng
1
2
,
Cheng Huang
1
,
Yinbo Zhao
1
,
Tao Fu
1
Affiliations
1
College of Aerospace Engineering, Chongqing University, Chongqing 400044, China.
2
State Key Laboratory of Coal Mining Disaster Dynamics and Control, Chongqing University, Chongqing 400044, China.
PMID:
31573243
DOI:
10.1103/PhysRevLett.123.119601
No abstract available
Publication types
Comment