Solution-processed deep ultraviolet (DUV) photodetectors based on wide band gap oxide semiconductors (WBGS) working in the <280 nm wavelength range are drawing increasing attention of the research community because of their cost-effective production and potential use in diverse applications. Here, we report on the synthesis of novel core-shell amorphous gallium oxide nanoparticles (NPs) (a-Ga2Ox/GaOx NPs) that have not been previously obtained. The amorphous gallium oxide NPs were synthesized from gallium nitride using the femtosecond laser ablation in liquid technique. Transmission electron microscopy and electron energy-loss spectroscopy measurements revealed the amorphous NP nature with a Ga-rich core and oxide-rich shell. Optical properties of these core-shell amorphous gallium oxide NPs were investigated by time-resolved spectroscopy and photoluminescence. As a proof of concept, the amorphous gallium oxide NPs were used as an active layer in a solar-blind DUV photodetector with high responsivity (778 mA/W) at 244 nm, which is the highest responsivity recorded to date for any solution-processed DUV photodetector. This work on a high-performance solution-processed device paves the way for large-scale industrial application of the WBGS.
Keywords: DUV Schottky photodetector; femtosecond laser ablation; gallium oxide nanoparticle; solar-blindness; wide bandgap oxide semiconductors.