A depth sensor with integrated frame difference detection is proposed. Instead of frame difference detection using light intensity, which is vulnerable to ambient light, the difference in depth between successive frames can be acquired. Because the conventional time-of-flight depth sensor requires two frames of depth-image acquisition with four-phase modulation, it has large power consumption, as well as a large area for external frame memories. Therefore, we propose a simple two-step comparison scheme for generating the depth frame difference in a single frame. With the proposed scheme, only a single frame is needed to obtain the frame difference, with less than half of the power consumption of the conventional depth sensor. Because the frame difference is simply generated by column-parallel circuits, no access of the external frame memory is involved, nor is a digital signal processor. In addition, we used an over-pixel metal-insulator-metal capacitor to store temporary signals for enhancing the area efficiency. A prototype chip was fabricated using a 90 nm backside illumination complementary metal-oxide-semiconductor (CMOS) image sensor process. We measured the depth frame difference in the range of 1-2.5 m. With a 10 MHz modulation frequency, a depth frame difference of >10 cm was successfully detected even for objects with different reflectivity. The maximum relative error from the difference of the reflectivity (white and wooden targets) was <3%.
Keywords: CMOS image sensor; depth sensor; frame difference; time-of-flight (TOF).