Electrical Properties of Top-Gate β-Ga₂O₃ Nanomembrane Metal-Semiconductor Field-Effect Transistor

Jiyeon Ma; Geonwook Yoo

doi:10.1166/jnn.2020.17259

Electrical Properties of Top-Gate β-Ga₂O₃ Nanomembrane Metal-Semiconductor Field-Effect Transistor

J Nanosci Nanotechnol. 2020 Jan 1;20(1):516-519. doi: 10.1166/jnn.2020.17259.

Authors

Jiyeon Ma¹, Geonwook Yoo¹

Affiliation

¹ School of Electronic Engineering, Soongsil University, Seoul 06938, Korea.

PMID: 31383202
DOI: 10.1166/jnn.2020.17259

Abstract

We fabricate top-gate β-Ga₂O₃ nanomembrane metal-semiconductor field-effect transistor (MESFET) using a mechanical exfoliation method, and investigate its electrical performance. The Schottky contact between top-gate metal and β-Ga₂O₃ (100) channel is evaluated by characterizing properties of Schottky barrier diode, exhibiting an on/off ratio of ~10₆, an ideality factor of 2.8 and a turn-on voltage of 1.1 V. The proposed top-gate β-Ga₂O₃ nanomembrane MESFET exhibits maximum transconductance of ~0.23 mS/mm, field-effect mobility of 1.2 cm²/V·s at V_DS = 1 V and subthreshold slope (SS) of 180 mV/dec with high on/off ratio of >10⁷. These results suggest that β-Ga₂O₃ nanomembrane MESFET could be a promising component toward β-Ga₂O₃-based high power device applications.