LIL (laser interference lithography), which does not require a mask, is an effective way to create a wide variety of periodic patterns by exposing two laser beams on a specimen. The LIL method can be used for a wide range of nano-pattern spacing by adjusting the laser intensity, exposure time, and development time. In addition, it has been used in many studies due to its advantage with regard to the forming of nanostructures over a large area in a short period of time. However, the existing LIL technique requires demanding precision levels to align the laser beam. In this paper, we attempt to solve this problem by using a prism laser interferometer to complement the complicated beam alignment of LIL. In this study, ma-p1205 PR-coated silicon wafers were exposed to a CW laser with 360 nm wavelength using a contact-type and a non-contact prism interferometer. A rectangular triangular prism and an equilateral triangular prism of N-BK7 were used, and periods of 300 nm and 260 nm were fabricated, respectively. The MATLAB and COMSOL programs were used to compare the theoretical values and fabricated patterns.