Organic thin-film transistor (TFT)-based pressure sensors have received huge attention for wearable electronic applications such as health monitoring and smart robotics. However, there still remains a challenge to achieve low power consumption and high sensitivity at the same time for the realization of truly wearable sensor systems where minimizing power consumption is significant because of limited battery run time. Here, we introduce a flexible pressure-sensitive contact transistor (PCT), a new type of pressure-sensing device based on organic TFTs for next-generation wearable electronic skin devices. The PCT consists of deformable S/D electrodes integrated on a staggered TFT. The deformable S/D electrodes were fabricated by embedding conducting single-walled carbon nanotubes on the surface of microstructured polydimethylsiloxane. Under pressure loads, the deformation of the electrodes on an organic semiconductor layer leads modulation of drain current from variation in both the channel geometry and contact resistance. By strategic subthreshold operation to minimize power consumption and increase the dominance of contact resistance because of gated Schottky contact, the PCT achieves both ultralow power consumption (order of 101 nW) and high sensitivity (18.96 kPa-1). Finally, we demonstrate a 5 × 5 active matrix PCT array on a 3 μm-thick parylene substrate. The device with ultralow power consumption and high sensitivity on a biocompatible flexible substrate makes the PCT promising candidate for next-generation wearable electronic skin devices.
Keywords: active matrix; contact resistance; electronic skin; gated Schottky contact, subthreshold operation; low power consumption.; organic field-effect transistors; pressure sensor.