Intrinsic Conductance of Domain Walls in BiFeO3

Yi Zhang; Haidong Lu; Xingxu Yan; Xiaoxing Cheng; Lin Xie; Toshihiro Aoki; Linze Li; Colin Heikes; Shu Ping Lau; Darrell G Schlom; Longqing Chen; Alexei Gruverman; Xiaoqing Pan

doi:10.1002/adma.201902099

Intrinsic Conductance of Domain Walls in BiFeO₃

Adv Mater. 2019 Sep;31(36):e1902099. doi: 10.1002/adma.201902099. Epub 2019 Jul 28.

Authors

Yi Zhang¹, Haidong Lu², Xingxu Yan¹, Xiaoxing Cheng³, Lin Xie¹, Toshihiro Aoki⁴, Linze Li¹, Colin Heikes⁵, Shu Ping Lau⁶, Darrell G Schlom^{5

7}, Longqing Chen³, Alexei Gruverman², Xiaoqing Pan^{1

8}

Affiliations

¹ Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, 92697, USA.
² Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
³ Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA.
⁴ Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA.
⁵ Department of Materials Science and Engineering, Cornell University, Ithaca, NY, 14850, USA.
⁶ Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong.
⁷ Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA.
⁸ Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.

PMID: 31353633
DOI: 10.1002/adma.201902099

Abstract

Ferroelectric domain walls exhibit a number of new functionalities that are not present in their host material. One of these functional characteristics is electrical conductivity that may lead to future device applications. Although progress has been made, the intrinsic conductivity of BiFeO₃ domain walls is still elusive. Here, the intrinsic conductivity of 71° and 109° domain walls is reported by probing the local conductance over a cross section of the BiFeO₃ /TbScO₃ (001) heterostructure. Through a combination of conductive atomic force microscopy, high-resolution electron energy loss spectroscopy, and phase-field simulations, it is found that the 71° domain wall has an inherently charged nature, while the 109° domain wall is close to neutral. Hence, the intrinsic conductivity of the 71° domain walls is an order of magnitude larger than that of the 109° domain walls associated with bound-charge-induced bandgap lowering. Furthermore, the interaction of adjacent 71° domain walls and domain wall curvature leads to a variation of the charge distribution inside the walls, and causes a discontinuity of potential in the [110]_p direction, which results in an alternative conductivity of the neighboring 71° domain walls, and a low conductivity of the 71° domain walls when measurement is taken from the film top surface.

Keywords: conductive atomic force microscopy; domain walls; ferroelectric films; intrinsic conductance; piezoresponse force microscopy.

Abstract

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