Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Zongjie Shen; Yanfei Qi; Ivona Z Mitrovic; Cezhou Zhao; Steve Hall; Li Yang; Tian Luo; Yanbo Huang; Chun Zhao

doi:10.3390/mi10070446

Effect of Annealing Temperature for Ni/AlO_x/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Micromachines (Basel). 2019 Jul 2;10(7):446. doi: 10.3390/mi10070446.

Authors

Zongjie Shen^{1

2}, Yanfei Qi^{1

3}, Ivona Z Mitrovic², Cezhou Zhao^{1

2}, Steve Hall², Li Yang^{4

5}, Tian Luo^{1

2}, Yanbo Huang^{1

2}, Chun Zhao^{6

7}

Affiliations

¹ Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
² Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK.
³ School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710061, China.
⁴ Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.
⁵ Department of Chemistry, University of Liverpool, Liverpool L69 3BX, UK.
⁶ Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China. chun.zhao@xjtlu.edu.cn.
⁷ Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK. chun.zhao@xjtlu.edu.cn.

Abstract

Resistive random access memory (RRAM) devices with Ni/AlO_x/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO_x) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO_x thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>10⁴), the narrowest resistance distribution, the longest retention time (>10⁴ s) and the most endurance cycles (>150).

Keywords: annealing temperatures; bipolar resistive switching characteristics; resistive random access memory (RRAM); solution-based dielectric.

Abstract

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